Professor Peter Persans is Associate Head of the Department of Physics, Applied Physics, and Astronomy. His research interests have been mostly in the physics of amorphous, nanocrystalline, and low-dimensional materials with applications in optoelectronics and energy conversion. Recently, he has focused on improving undergraduate education at all levels. Current projects include development of a first semester mentor program across the sciences and facilitating student creation of open-source materials to enable remote laboratory experiment access for introductory physics education.
B.S., Physics, Polytechnic Institute of New York, 1975. S.M., Physics, University of Chicago, 1977. Ph.D., Physics, University of Chicago, 1982 (Thesis advisor: H. Fritzsche).
- AJ Said, D Recht, JT Sullivan, J. Warrender, T Buonassisi, PD Persans, M Aziz, Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes, Appl Phys Lett, 99, 073503, (2011).
- V Vuitton, BN Tran, PD Persans, J Ferris, Determination of the complex refractive indices of Titan haze analogs using photothermal deflection spectroscopy, Icarus, 203, 663-671, (2009).
- JP Mailoa, AJ Akey, CB Simmons, D Hutchinson, J Mathews, JT Sullivan, D Recht, MT Winkler, JS Williams, JM Warrender, PD Persans, MJ Aziz, T Buonassisi, Room-temperature sub-band gap optoelectronic response of hyperdoped silicon, Nature Communications Volume: 5, Article Number: 3011(2014).
- David Hutchinson, Jay Mathews, Joseph T. Sullivan, Austin Akey, Michael J. Aziz, Tonio Buonassisi, Peter Persans, and Jeffrey M. Warrender, Effect of layer thickness on device response of silicon heavily supersaturated with sulfur, AIP Advances 6, 055307 (2016); doi: 10.1063/1.4948986
- PD Persans, Vibrational Raman Studies of Amorphous Solid Interfaces," Phys. Rev. B 39 1797 (1989)